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When talking about the Topcon technology (Topcon technology All Black Solar Panel) for photovoltaic cells, we are actually talking about an advanced solar cell production technology that offers significant advantages in terms of improved cell conversion efficiency and performance. topcon, or "Tunnel Oxide Passivated Contact", is a surface engineering method that achieves enhanced electron conductivity and carrier surface complex losses by introducing specific amorphous silicon (a-Si) or microcrystalline silicon (μc-Si) thin films to the front and back surfaces of the cell. Topcon, or "Tunnel Oxide Passivated Contact", is a surface engineering method that enhances electronic conductivity and reduces carrier surface complex losses by introducing specific amorphous silicon (a-Si) or microcrystalline silicon (μc-Si) films on the front and back surfaces of the cell.    The core idea of the Topcon technology lies in the fact that passivation films are applied to both the positive (front surface) and negative (back surface) surfaces of the photovoltaic cell during the fabrication process, and these films play a key role in reducing electron-hole complex losses, improving electronic conductivity, and inhibiting surface reactions.   In the process, firstly, a layer of amorphous silicon or microcrystalline silicon film is coated on the front and back surfaces of the cell, respectively, by methods such as physical vapour deposition (PECVD). These films have excellent electronic conductivity and passivation properties, which can effectively reduce the surface compounding phenomenon of carriers. In addition, by forming a special oxide layer called "tunnel oxide" on the front surface of the cell, the collection and transport of carriers can be further enhanced, thus improving the efficiency of the cell.   The advantage of the Topcon technology is that it integrates the optimisation of the performance of the positive and negative surfaces through the design of the double-sided passivation, which significantly reduces the loss of electrons and holes from the complex on the surface. This helps to improve the efficiency of PV cells and provide more stable performance, especially in high temperature environments.   However, it is to be noted that the manufacturing process of the Topcon technology is more complex than the conventional process, which may lead to an increase in production costs. Therefore, in practical applications, the choice of whether to adopt the Topcon technology needs to be based on a combination of investment costs and the benefits of efficiency improvements. Overall, the Topcon technology represents an significant technological innovation in the field of solar cells and offers potential opportunities for further development of the photovoltaic industry and improvement of energy conversion efficiency.

N-Type TOPCon (N-Type Solar Panel) is a Tunnel Oxide Passivated Contact (TOPCon) solar cell technology based on the selective carrier principle. The cell structure of this technology is an N-type silicon substrate cell, an ultra-thin layer of silicon oxide is prepared on the backside of the cell, and then a thin layer of doped silicon is deposited, which together form a passivated contact structure. This technology effectively reduces the surface composite and metal contact composite, for N-PERT cell conversion efficiency to further enhance the provision of greater space.   Compared to conventional P-type PERC cells, N-type TOPCon cells have higher oligo lifetime and better performance, which gives N-type TOPCon cells more room for conversion efficiency improvement. In addition, N-Type TOPCon cells have better double-sidedness, which contributes to higher module power and power generation.   In conclusion, N-TOPCon is an advanced photovoltaic technology with great potential for development. By improving the conversion efficiency, reduce costs and improve reliability, N-type TOPCon cells can become the core competitiveness of the future photovoltaic market, the highest conversion rate is known to the public information in the independent research and development of J-TOPCon3.0 POPAID technology and M10 size n-type cell up to 26.7%.   P-type TOPCon is another type of photovoltaic cell and the difference between N-type TOPCon is as follows:   Raw material: N-type photovoltaic cells are doped with elemental phosphorus, while P-type photovoltaic cells are doped with elemental boron. Conductivity: N-type photovoltaic cells are electronically conductive, while P-type photovoltaic cells are hole conductive. Lesson life: N-type photovoltaic cells have a longer lesson life, while P-type photovoltaic cells have a shorter lesson life. Performance: N-type photovoltaic cells have higher conversion efficiency, shorter process, better resistance to attenuation, lower temperature coefficient, but higher production cost. The P-type photovoltaic cell conversion efficiency is lower, the process is longer, poorer attenuation resistance, higher temperature coefficient, but the production cost is lower. Development trend: the current development trend of N-type photovoltaic cells is more obvious, because of its higher conversion efficiency, shorter process, better anti-attenuation, lower temperature coefficient, which is conducive to improving photovoltaic power generation and reduce power generation costs.